maximum ratings www.dacosemi.com.tw features t ) j h i t v s h f d v s s f o u d b q b c m f t ; f s p s f w f s t f s f d p w f s z d v s s f o u t ) j h i c b o e x j e u i - 1 - sic schottky diode type 2 200a daco semiconductor co., ltd. DACSB40060CT -55 to +175 operating junction temperature : +175 -55 to storage temperature : ? ' f c part number maximum recurrent peak reverse voltage 600v DACSB40060CT 600v maximum dc blocking voltage benefits applications t . p u p s e s j w f t t 4 x j u d i n p e f q p x f s t v q q m j f t t & w d i b s h f s t t 4 p m b s j o w f s u f s t t 8 f m e j o h f r v j q n f o u t 6 o j q p m b s s f d u j ? f s t ; f s p t x j u d i j o h m p t t t ) j h i f s f d j f o d z i f,max v rrm v n-m mounting torque m6 screw 3~4.7 repetitive peak reverse voltage t j =25 c 600 non-repetitive peak forward current (per leg) t c =25 c, t p =10 + s 5600 surge non-repetitive forward current sine halfwave (per leg) i fsm t c =25 c, t p =8.3 ms 1400 t c =150 c, t p =8.3 ms 875 maximum rating symbol conditions value unit continuous forward current i f t c =135 c 200 a t 5 f n q f s b u v s f * o e f q f o e f o u 4 x j u d i j o h # f i b w j p s t 7 % $ 7 t * f ? t c <135c ? " t 4 n b m m f s i f b u t j o l t 1 p x f s g b d u p s d p s s f d u j p o t % j p e f t o v c c f s t " v u p n p u j w f t j o e v d u j p o i f b u j o h (per leg) t c =150 c, t p =10 + s 3500 % j n f o t j p o t j o mm (1 mm =
lug teminal anode 1 baseplate common cathode lug teminal anode 2 3 ? parallel devices without thermal runaway
www.dacosemi.com.tw - 2 - daco semiconductor co., ltd. ? feb 2016 min. typ. max. v dc 600 - - -1.451.65 - 1.70 2.00 - 30 200 - 200 1,000 reverse current i r v r =600v, t j =25 c v r =600v, t j =175 c dc blocking voltage v diode forward voltage v f i f =200a, t j =25 c i f =200a, t j =175 c electrical characteristics , at t j =25 c, unless otherwise specified. (per leg) static characteristics symbol conditions values unit DACSB40060CT + a q rr - 698 - nc - 12,580 - - 1,250 - - 1,170 - r ' jc 0.07 o c/w pf v r =200v, f=1 mhz v r =400v, f=1 mhz thermal characteristics (per leg) thermal resistance from junction to case total capacitive charge v r =400v, t j =25 c total capacitance c v r =0v, f=1 mhz ac characteristics (per leg) typ. static characteristics symbol values unit min. typ. max. static characteristics symbol conditions values unit t j =25 c t j =25 c t j =25 c
www.dacosemi.com.tw - 3 - daco semiconductor co., ltd. ? forward characteristics (parameterized on t j ) reverse characteristics (parameterized on tj) current derating 0 0.01 0.1 1.0 020406080100 i r (ma) volts (%) - 40 80 120 160 200 25 75 125 175 i f (a) t c ( c) typical performance capacitance recovery charge 0 3,145 6,290 9,435 12,580 15,725 0 1 10 100 1000 c (pf) v r (v) 0 80 160 240 320 400 480 0 50 100 150 200 250 300 350 400 q rr (nc) v r (v) feb 2016 DACSB40060CT t j =25 c 720 640 560 10 30 50 70 90 25c 175c 75c 125c 240 280 single phase,half wave 60hz res istive or inductive load forward surge current i fsm (a) cycles numder of cycles at 60hz - cycles - 280 560 840 1120 1400 1 10 100 1680 8.3ms single half sine wave jedec method t j =25 c 0 30 60 90 120 150 180 0.0 0.4 0.8 1.2 1.6 2.0 i f (a) v f (v) 240 t j =25 c 175c 125c 75c 25c 210 800
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